发明名称 Metallization of solar cells
摘要 Approaches for the metallization of solar cells and the resulting solar cells are described. In an example, a method of fabricating a solar cell involves forming a barrier layer on a semiconductor region disposed in or above a substrate. The semiconductor region includes monocrystalline or polycrystalline silicon. The method also involves forming a conductive paste layer on the barrier layer. The method also involves forming a conductive layer from the conductive paste layer. The method also involves forming a contact structure for the semiconductor region of the solar cell, the contact structure including at least the conductive layer.
申请公布号 US9362427(B2) 申请公布日期 2016.06.07
申请号 US201314137782 申请日期 2013.12.20
申请人 SunPower Corporation;Total Marketing Services 发明人 Sewell Richard Hamilton;Barkhouse David Aaron Randolph;Wu Junbo;Cudzinovic Michael;Loscutoff Paul;Behnke Joseph;Ngamo Toko Michel Arsène Olivier
分类号 H01L31/0224;H01L31/18;H01L31/068;H01L31/0745 主分类号 H01L31/0224
代理机构 Blakely Sokoloff Taylor Zafman LLP 代理人 Blakely Sokoloff Taylor Zafman LLP
主权项 1. A method of fabricating a solar cell, the method comprising: forming a silicon oxide layer on a semiconductor region disposed in or above a substrate, the semiconductor region comprising monocrystalline or polycrystalline silicon; forming a silicon nitride layer on the silicon oxide layer; forming a trench into but not through the silicon nitride layer by only partially recessing a portion of the silicon nitride layer; forming a conductive paste layer in the trench; forming a conductive layer from the conductive paste layer, wherein forming the conductive layer comprises extending the trench through the silicon nitride layer and through the silicon oxide layer to expose the semiconductor region; and forming a contact structure in direct electrical contact with the semiconductor region of the solar cell, the contact structure comprising at least the conductive layer.
地址 San Jose CA US