Photoelectric conversion device and method for producing same

摘要

This photoelectric conversion device (10) is provided with: an n-type monocrystalline silicon substrate (21); an IN layer (25) and an IP layer (26) formed on the back surface of the n-type monocrystalline silicon substrate (21); an n-side electrode (40) containing an n-side underlayer (43), an n-side primary conductive layer (44), and an n-side protective layer (45); and a p-side electrode (50) containing a p-side underlayer (53), a p-side primary conductive layer (54), and a p-side protective layer (55). The n-side primary conductive layer (44) is formed in a manner so as not to cover the lateral surface of the n-side underlayer (43), and is covered at the lateral surface by the n-side protective layer (45). The p-side electrode (50) is formed in such a manner the lateral surface of the p-side underlayer (53) is not covered, and the lateral surface is covered by the p-side protective layer (55).

主权项

1. A method for producing a photoelectric conversion device, comprising the steps of:
forming a p-type region and an n-type region on one surface of a semiconductor substrate; and forming a p-side electrode and an n-side electrode which are isolated by an isolation trench, the p-side electrode being formed on the p-type region and the n-side electrode being formed on the n-type region, respectively, wherein the electrode forming step includes the steps of: forming an underlayer and a first primary conductive layer on the p-type region and the n-type region; forming a resist film on an area of the first primary conductive layer corresponding to the isolation trench; forming a p-side second primary conductive layer and an n-side second primary conductive layer, respectively, so as to be isolated from each other, by electrolytic plating using the first primary conductive layer for which the resist film is formed as a seed layer; removing the resist film and etching the first primary conductive layer and the underlayer to form a p-side first primary conductive layer and an n-side first primary conductive layer, and a p-side underlayer and an n-side underlayer, respectively; and forming a p-side protective layer and an n-side protective layer, respectively, by electrolytic plating so as to cover the p-side second primary conductive layer and the n-side second primary conductive layer.