Semiconductor integrated circuit device with transistor and non-transistor regions

摘要

In a high-frequency circuit, it is necessary to provide galvanic blocking between active elements such as transistors and between an active element and an external terminal, and thus MIM capacitors or the like are used frequently. A MIM capacitor coupled to an external terminal is easily affected by static electricity from outside and causes a problem of electro-static breakdown or the like. In a MIM capacitor formed over a semi-insulating compound semiconductor substrate, a first electrode thereof is coupled to an external pad and to the semi-insulating compound semiconductor substrate, and a second electrode thereof is coupled to the semi-insulating compound semiconductor substrate.

主权项

1. A semiconductor integrated circuit device, comprising:
(a) a semi-insulating compound semiconductor substrate having a first major surface; (b) a transistor region and a non-transistor region disposed over the first major surface of the semi-insulating compound semiconductor substrate; (c) a first conductive epitaxial compound semiconductor film disposed over and on the first major surface of the semi-insulating compound semiconductor substrate only within the transistor region; (d) a first insulating film disposed over the semi-insulating compound semiconductor substrate within the non-transistor region; (e) an external electrode pad disposed in an upper layer of the first insulating film within the non-transistor region; (f) a first metal substrate contact portion electrically coupled to the external electrode pad within the non-transistor region; (g) a Metal-Insulator-Metal (MIM) capacitor disposed within the non-transistor region and having a first capacitor electrode and a second capacitor electrode disposed within the non-transistor region; and (h) a semi-insulating surface layer, having a different material composition than the first conductive epitaxial compound semiconductor film, disposed only within the non-transistor region over and on the first major surface of the semi-insulating compound semiconductor substrate in a layer lower than the first insulating film, and having a resistivity lower than the semi-insulating compound semiconductor substrate, wherein the first capacitor electrode is electrically coupled to the external electrode pad and the first metal substrate contact portion within the non-transistor region, the first insulating film is disposed between the second capacitor electrode and the semi-insulating surface layer, the second capacitor electrode is electrically coupled to a second metal substrate contact portion within the non-transistor region, the first metal substrate contact portion and the second metal substrate contact portion are disposed in a layer below the second capacitor electrode within the non-transistor region, and the first metal substrate contact portion and the second metal substrate contact portion are both disposed directly on the semi-insulating surface layer and electrically coupled to the semi-insulating compound semiconductor substrate via the semi-insulating surface layer.