发明名称 |
Cu ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a cylindrical Cu-Ga alloy sputtering target formed by a simple formation method, capable of suppressing generation of chipping in a machine work, or preventing a crack.SOLUTION: A Cu-Ga alloy sputtering target is a cylindrical casting by a Cu alloy containing Ga:27.0-30.0 atom%. The casting has a two-phase coexistent structure in which a ζ-phase of the Cu alloy is dispersed into a γ-phase of the Cu alloy, and the area ratio of the ζ-phase is 5.0-70.0%, and an average divided length related to the ζ-phase is 10.0-300.0 μm.SELECTED DRAWING: None |
申请公布号 |
JP2016141863(A) |
申请公布日期 |
2016.08.08 |
申请号 |
JP20150020060 |
申请日期 |
2015.02.04 |
申请人 |
MITSUBISHI MATERIALS CORP |
发明人 |
KATO SHINJI;CHO SHUHIN;KOMIYAMA SHOZO |
分类号 |
C23C14/34;B22D11/00;B22D11/04;B22D11/124;B22D13/02;B22D13/10;B22D27/04;C22C9/00 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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