IMPROVED CHAMBERS FOR PARTICLE REDUCTION IN SUBSTRATE PROCESSING SYSTEMS

摘要

A substrate processing system comprises a chamber to process a semiconductor substrate. At least one surface of the chamber comprises a high surface area finish. A purge / vent system is configured to selectively supply purge gas over the high surface area finish of the at least one surface to trap particles in the high surface area finish without opening the chamber. The high surface area finish on the at least one surface of the chamber has a porosity within a predetermined range of 30-60%. The porosity is defined by a normalized density of the high surface area finish relative to a lower natural bulk material of the at least one surface of the chamber.