| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting element which can further reduce dislocation density and has a semiconductor layer of good crystal orientation.SOLUTION: A light emitting element comprises a sapphire substrate having a c-plane as a principal surface and a semiconductor layer provided on the principal surface side of the sapphire substrate. The sapphire substrate includes: first units each composed of, when viewed from the principal surface side, a first region which has sides parallel with a first m-axis and a second m-axis, respectively, which divide a virtual hexagonal shape into equal three rhomboids, a second region having sides parallel with the second m-axis and a third m-axis, respectively, and a third region having sides parallel with the first m-axis and the third m-axis, respectively; and a plurality of second units each of which is arranged according to each side of the first unit and mirror symmetry with respect to the first unit, in which the unit is arranged to leave a space in a central region of the unit.SELECTED DRAWING: Figure 3 |
