| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion device capable of implementing both improvement in reliability of a gate insulation film of a transfer transistor and suppression of leakage to a neighboring pixel, and a manufacturing method thereof.SOLUTION: A photoelectric conversion device comprises: the pixel including the transfer transistor for transferring signal charge that is generated in a photoelectric conversion part, from a charge storage region to a floating diffusion region; and a peripheral transistor forming a peripheral circuit that controls a read-out operation of a pixel signal based on the signal charge from the pixel. A gate electrode and the floating diffusion region of the transfer transistor are separated by a first distance in a planar view, and a gate electrode and a drain region of the peripheral transistor are separated by a second distance that is shorter than the first distance, in a planar view.SELECTED DRAWING: Figure 1 |
