| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor solar cell having excellent properties, and a method for manufacturing the compound semiconductor solar cell.SOLUTION: The compound semiconductor solar cell comprises a first compound semiconductor photoelectric conversion cell composed of InGaAs, a second compound semiconductor photoelectric conversion cell composed of GaAs or InGaAs, and a compound semiconductor buffer layer disposed between the first compound semiconductor photoelectric conversion cell and the second compound semiconductor photoelectric conversion cell. The compound semiconductor buffer layer is varied so as to increase in a lattice constant from the second compound semiconductor photoelectric conversion cell side toward the first compound semiconductor photoelectric conversion cell side, the lattice constant of the first compound semiconductor photoelectric conversion cell being smaller than the lattice constant of a compound semiconductor layer disposed at a position closest to the first compound semiconductor photoelectric conversion cell out of the compound semiconductor buffer layer, and a lattice constant difference ratio of the lattice constant of the first compound semiconductor photoelectric conversion cell to the lattice constant of the compound semiconductor layer disposed at a position closest to the first compound semiconductor photoelectric conversion cell out of the compound semiconductor buffer layer being 0.15% to 0.74% inclusive. |
