Photoelectric conversion device

摘要

A photoelectric conversion device with low resistance loss and high conversion efficiency is provided. The photoelectric conversion device includes a first silicon semiconductor layer and a second silicon semiconductor layer between a pair of electrodes. The first silicon semiconductor layer is provided over one surface of a crystalline silicon substrate having one conductivity type and has a conductivity type opposite to that of the crystalline silicon substrate, and the second silicon semiconductor layer is provided on the other surface of the crystalline silicon substrate and has a conductivity type which is the same as that of the crystalline silicon substrate. Further, the first silicon semiconductor layer and the second silicon semiconductor layer each have a carrier concentration varying in the film thickness direction.

主权项

1. A photoelectric conversion device comprising:
a first electrode; a second electrode; a crystalline silicon substrate having one conductivity type between the first electrode and the second electrode; a first silicon semiconductor layer between the crystalline silicon substrate and the first electrode, the first silicon semiconductor layer having a conductivity type opposite to that of the crystalline silicon substrate; a light-transmitting conductive film between the first silicon semiconductor layer and the first electrode; and a second silicon semiconductor layer between the crystalline silicon substrate and the second electrode, the second silicon semiconductor layer having the same conductivity type as the crystalline silicon substrate, wherein the first silicon semiconductor layer comprises a first region, a second region under the first region, and a third region under the second region, wherein the first silicon semiconductor layer comprises an impurity element imparting a conductivity type, wherein a concentration of the impurity element is constant in the third region, wherein a concentration of the impurity element in the second region monotonically increases in a film thickness direction from a third region side to a first region side, wherein a concentration of the impurity element is constant in the first region, and wherein the second silicon semiconductor layer is in contact with the second electrode.