发明名称 |
Devices and methods of forming higher tunability FinFET varactor |
摘要 |
Devices and methods for forming semiconductor devices with wider FinFETs for higher tunability of the varactor are provided. One method includes, for instance: obtaining an intermediate semiconductor device; applying a spacer layer over the semiconductor device; etching the semiconductor device to remove at least a portion of the spacer layer to expose the plurality of mandrels; removing the mandrels; etching the semiconductor device to remove a portion of the dielectric layer; forming at least one fin; and removing the spacer layer and the dielectric layer. One intermediate semiconductor device includes, for instance: a substrate; a dielectric layer over the substrate; a plurality of mandrels formed on the dielectric layer, the mandrels including a first set of mandrels and a second set of mandrels, wherein the first set of mandrels have a width twice as large as the second set of mandrels; and a spacer layer applied over the mandrels. |
申请公布号 |
US9437713(B2) |
申请公布日期 |
2016.09.06 |
申请号 |
US201414181790 |
申请日期 |
2014.02.17 |
申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
Singh Jagar;Wei Andy;Srinivasan Gopal;Gendron Amaury |
分类号 |
H01L29/66;H01L29/78;H01L21/308;H01L29/94;H01L27/06 |
主分类号 |
H01L29/66 |
代理机构 |
Heslin Rothenberg Farley & Mesiti P.C. |
代理人 |
Heslin Rothenberg Farley & Mesiti P.C. ;Graff Jacquelyn A |
主权项 |
1. A method comprising:
obtaining an intermediate semiconductor device, comprising:
a substrate;a dielectric layer over the substrate; anda plurality of mandrels formed on the dielectric layer; applying a spacer layer over the intermediate semiconductor device; etching the intermediate semiconductor device to remove a horizontal portion of the spacer layer to form at least one vertical portion of the spacer layer and to expose a top surface of the plurality of mandrels, the at least one vertical portion of the spacer layer comprising:
a first set of spacers with a first width; anda second set of spacers with a second width, wherein the first width is about twice the size as the second width; removing the plurality of mandrels; etching the intermediate semiconductor device to remove at least a portion of the dielectric layer to form a first set of masks under the first set of spacers and a second set of masks under the second set of spacers; forming at least one first fin and at least one second fin, wherein the intermediate semiconductor device now comprises:
a portion of the substrate;the at least one first fin extending above the portion of the substrate, the at least one first fin having a first fin width;the at least one second fin extending above the portion of the substrate, the at least one second fin having a second fin width and wherein the first fin width is about twice the size of the second fin width;the first set of masks positioned on the at least one first fin;the second set of masks positioned on the at least one second fin;the first set of spacers positioned on the first set of masks; andthe second set of spacers positioned on the second set of masks; and removing the at least one vertical portion of the spacer layer and the dielectric layer. |
地址 |
Grand Cayman KY |