Insulating trench forming method

摘要

A method of manufacturing an insulating trench including the successive steps of: a) forming, on a semiconductor substrate, a first masking structure including a layer of a first selectively-etchable material and etching a trench into the substrate; b) forming an insulating coating on the trench walls and filling the trench with doped polysilicon; c) forming a silicon oxide plug penetrating into the trench substantially all the way to the upper surface of the substrate and protruding above the upper surface of the substrate; and d) removing the layer of the first material.

主权项

1. A method of manufacturing an insulating trench, the method comprising:
forming a trench having trench walls in a surface of a substrate; covering the trench walls with an insulating material; filling the trench with doped polysilicon; and forming a silicon oxide plug over the polysilicon, an upper surface of the silicon oxide plug located above the surface of the substrate and a lower surface of the silicon oxide plug being substantially at or below the surface of the substrate; and forming an insulator layer on the surface of the substrate and the upper surface of the silicon oxide plug.