| 摘要 |
A normally-off semiconductor device with gate regions formed in a high-quality base is manufactured by forming a P+ layer in a lower surface of an N- substrate, selectively forming P+ gate regions in an upper surface of the N- substrate, forming intergate P+ regions in the upper surface of the N- substrate between the P+ gate regions, forming an N+ layer in an upper surface of an N- substrate, joining the N- substrate and the N- substrate to each other by heating them at about 800 DEG C. in a hydrogen atmosphere while the upper surface of the N- substrate and a lower surface of the N- substrate are being held against each other, and forming an anode electrode and a cathode electrode.
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