TWO-STEP POST NITRIDATION ANNEALING FOR LOWER EOT PLASMA NITRIDED GATE DIELECTRICS

摘要

A method of forming a dielectric film that includes nitrogen. The method includes incorporating nitrogen into a dielectric film using a plasma nitridation process to form a silicon oxynitride film. The silicon oxynitride film is annealed first in an inert or reducing ambient at a temperature ranging between about 700°C and 1100°C. The silicon oxynitride film is annealed for the second time in an oxidizing ambient at a temperature ranging between about 900°C and 1100°C.