发明名称 |
Semiconductor device, method of fabricating same, and, electrooptical device |
摘要 |
A pair of substrates forming the active matrix liquid crystal display are fabricated from resinous substrates having transparency and flexibility. A thin-film transistor has a semiconductor film formed on a resinous layer formed on one resinous substrate. The resinous layer is formed to prevent generation of oligomers on the surface of the resinous substrate during formation of the film and to planarize the surface of the resinous substrate.
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申请公布号 |
US2004183076(A1) |
申请公布日期 |
2004.09.23 |
申请号 |
US20040815653 |
申请日期 |
2004.04.02 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;ARAI YASUYUKI;TERAMOTO SATOSHI |
分类号 |
G02F1/136;G02F1/13;G02F1/1333;G02F1/1362;G02F1/1368;H01L21/00;H01L21/84;H01L29/78;H01L29/786;(IPC1-7):H01L31/036 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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