| 摘要 |
PROBLEM TO BE SOLVED: To prevent deterioration in the mobility of carriers and an increase in an absolute value of a threshold voltage, and obtain thermodynamically stable property for a transistor having a gate insulation film employing a high dielectric constant material. SOLUTION: A semiconductor apparatus has a substrate 101; a gate insulation film 105 formed on the substrate 101, and consisting of a high dielectric phase-separated in a direction perpendicular to the main surface of the substrate and into a plurality of layers; and a gate electrode 106 consisting of polysilicon formed on the gate insulation film 105. The gate insulation film 105 is phase-separated from the substrate side into a first metal oxide film 105a consisting of a low dielectric constant stable phase, a second metal oxide film 105b consisting of a high dielectric constant stable phase and a third metal oxide film 105c consisting of a low dielectric constant stable phase. COPYRIGHT: (C)2007,JPO&INPIT
|
