| 摘要 |
PROBLEM TO BE SOLVED: To provide a readily manufacturable thermal infrared sensor having superior detection sensitivity, using a dielectric film whose solid-state properties change depending on the temperature. SOLUTION: In this thermal infrared sensor 100 having an infrared detection part 110, the infrared detection part 110 is equipped with the first electrode part 103a and the second electrode part 103b formed adjacent on a substrate 105, and a conductive layer 106, formed in a state of facing the first electrode part 103a and the second electrode part 103b via the dielectric film 101. The conductive layer 106 includes the third electrode part 106a facing the first electrode part 103a and the fourth electrode part 106b facing the second electrode part 103b. The first capacitor, comprising the first electrode part 103a and the third electrode part 106a and the second capacitor that comprises the second electrode part 103b and the fourth electrode part 106b are connected in series by electrical connections formed by including the third electrode part 106a and the fourth electrode part 106b in the conductive layer 106. COPYRIGHT: (C)2008,JPO&INPIT
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