| 摘要 |
PROBLEM TO BE SOLVED: To provide a film forming method capable of reducing variation in film quality and film thickness which is formed on a plurality of semiconductor substrates for products, with no increase in cost. SOLUTION: In the film forming method, a film is formed on a plurality of semiconductor substrates 26 for products by supplying reactive gas to a furnace body 11 of a vertical reactive furnace 10 which comprises a reactive gas supply tube 23 so arranged as to contact the outside wall of the furnace body 11 and a semiconductor substrate supporting body 13 which comprises a first substrate housing part 32 supporting a plurality of dummy semiconductor substrates 25 in multiple stages and a second substrate housing part 33 for supporting the plurality of semiconductor substrates 26 for products in multiple stages. The reactive gas is supplied to the furnace body 11 using the reactive gas supply tube 23 wound on an outside wall 11-2A of the furnace body 11 at the part facing the first substrate housing part 32, and/or an outside wall 11-1A of the furnace body 11 at the part positioned lower than the first substrate housing part 32, with the furnace body 11 being heated. COPYRIGHT: (C)2008,JPO&INPIT
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