| 摘要 |
A schottky diode structure with a multi-portioned guard ring and a method for manufacturing the same are provided to reduce a leakage and to implement a continuous reverse voltage property under a reverse bias condition by protecting a contact edge of a schottky contact layer. A semiconductor material region(11) has a first major surface(18), a first conductivity type, and a first dopant concentration. A second conductive type doped region is formed on the semiconductor member region and extended from the first major surface. The second conductive type doped region is opposite to the first conductive type. A first conductive contact is electrically connected to the semiconductor material region. A second conductive contact is electrically connected to the semiconductor material region. The doped region includes a first portion(410) and a second portion(411). The first portion is adjacent to the first major surface to have a first dopant concentration. The second portion is adjacent to the first major surface to have a second dopant concentration. The second dopant concentration is lower than the first dopant concentration. The second conductive contact is overlapped with the second portion and is not overlapped with the first portion. The second conductive contact configures the semiconductor material region, a first schottky barrier, the second portion, and a second schottky barrier.
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