发明名称 |
Non-volatile memory device and method for manufacturing same |
摘要 |
According to an embodiment, a non-volatile memory device includes a first wiring provided on an underlayer, a first memory cell array provided on the first wiring and including a plurality of memory cells, a first select element including a first control electrode provided between the first wiring and the first memory cell array. The device also includes a second wiring provided at the same level as the first wiring and electrically connected to the first control electrode, and a first plug electrically connecting the first control electrode and the second wiring, one end of the first plug being in contact with the second wiring, and a side surface of the first plug being in contact with the first control electrode. |
申请公布号 |
US9362168(B2) |
申请公布日期 |
2016.06.07 |
申请号 |
US201414150193 |
申请日期 |
2014.01.08 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Tanaka Toshiharu |
分类号 |
G11C5/06;H01L21/768;H01L27/06;H01L27/105 |
主分类号 |
G11C5/06 |
代理机构 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A non-volatile memory device comprising:
a first wiring provided above an underlayer; a first memory cell array provided above the first wiring and including memory cells; a first select element including a first control electrode provided between the first wiring and the first memory cell array; a second wiring provided at the same level as the first wiring, and electrically connected to the first control electrode; and a first plug electrically connecting the first control electrode and the second wiring, one end of the first plug being in contact with the second wiring, and a side surface of the first plug being in contact with the first control electrode. |
地址 |
Minato-ku JP |