Methods of forming oxide thin film and electrical devices and thin film transistors using the methods

摘要

Provided are a method of forming an oxide thin film and an electrical device and thin film transistor using the method. The method includes forming an oxide thin film on a substrate by applying a precursor solution; and performing a thermal treatment process on the substrate under a pressurized atmosphere using a gas at about 100° C. to about 400° C.

主权项

1. A method of forming an oxide thin film, comprising:
forming an oxide thin film on a substrate by applying a precursor solution through a solution process method; and performing a pressurized thermal treatment process under a pressurized atmosphere using a gas at about 100° C. to about 400° C., wherein during the performing of the pressurized thermal treatment process, the pressurized atmosphere is a pressure condition of about 5 bar to about 20 bar.