Magnetoresistive element and magnetic memory using the same

摘要

According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization. The first nonmagnetic layer is provided between the first and second magnetic layers. The second magnetic layer includes third and fourth magnetic layers, and a second nonmagnetic layer formed between the third and fourth magnetic layers. The third magnetic layer is in contact with the first nonmagnetic layer and includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W.

主权项

1. A semiconductor storage device comprising:
a first layer including a first magnetic layer; a second layer; and a third layer including a first nonmagnetic layer and provided between the first layer and the second layer, wherein the second layer includes a second magnetic layer, a third magnetic layer, and a second nonmagnetic layer formed between the second magnetic layer and the third magnetic layer, the second magnetic layer includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W, the second magnetic layer includes a first magnetic material, a second magnetic material, and a first nonmagnetic material formed between the first magnetic material and the second magnetic material, the first magnetic material is in contact with the third layer, and the second magnetic material is Co.