Method and Apparatus for the Multi-Layer and Multi-Component Coating of Thin Films on Substrates, and Multi-Layer and Multi-Component Coatings

摘要

The present invention pertains to a process for depositing multi-component and nanostructured thin films. Various parameters are monitored during the process to produce the structure of the thin films, on one hand the residence time of the gas mixture in the reactor is controlled by the pumping rate, on the other side to generate the plasma direct current (DC) or radio frequency (RF) sources are used, plus the combination of three unbalanced magnetrons allows alternative emission of elements that make up the multi-component and nanostructured films. The process is monitored by an optical emission spectrometer (EOE) and a Langmuir probe (SL), the EOE can follow the emission corresponding to the electronic transitions of atoms and molecules in the plasma. Emissions occur in the visible, infrared and ultraviolet domains. The relationships between spectral networks of different elements have been identified that ensure structural characteristics of thin films. Through SL, operating conditions have been identified by measuring the electron temperature and measuring the density of electrons. It was decided in the prototype to make this measurement at significantly important points in the process.

主权项

1. A process for coating multilayer and multi-component thin films on substrates of various materials, characterized by comprising the steps of:
a) Fixing the substrate to be coated on the sample holder; b) Reaching a five thousandths of pascal pressure in the system and producing a direct current plasma with Ar for cleaning the Cr blank. Introducing Ar in the system until reaching a pressure of 1 Pa. Controlling and measuring the Ar entry through the controller and flow meter; c) Introducing 1 Nl/min at standard conditions of temperature and pressure (STP) and generating a plasma with a voltage of between 500 and 800V. Maintaining the plasma for 20 minutes to clean oxides formed on the blank; d) Moving the substrate with the sample holder to position it in front of the Cr magnetron and performing the control of energy supply by power or current; e) Injecting nitrogen for the formation of CrN. Starting with the injection of nitrogen from the gas mixture produced; f) Setting the nitrogen fraction in the mixture using the flow controllers, injecting the extra nitrogen in the vicinity of the sample; g) Swapping the power supply to the aluminum magnetron; and h) Separately injecting nitrogen for the production of AlN.