Semiconductor device including a solid state imaging device

摘要

A semiconductor device is reduced in power consumption, the semiconductor device including a solid-state imaging device that includes pixels each having a plurality of light receiving elements. A pixel having first and second photodiodes is provided with a first transfer transistor that transfers charge in the first photodiode to a floating diffusion capacitance section, and a second transfer transistor that combines charge in the first photodiode and charge in the second photodiode, and transfers the combined charge to the floating diffusion capacitance section. Consequently, the semiconductor device is reduced in power required for activation of each transfer transistor in operation such as imaging with the solid-state imaging device.

主权项

1. A semiconductor device, comprising:
a solid-state imaging device including a plurality of pixels, each of the plurality of pixels comprising: a first light receiving element and a second light receiving element that each generate charge corresponding to light quantity of incident light, a first transfer transistor that transfers charge in the first light receiving element to a floating diffusion capacitance section, and a second transfer transistor that combines the charge in the first light receiving element and charge in the second light receiving element, and transfers the combined charge to the floating diffusion capacitance section.