发明名称 |
Engineering induced tunable electrostatic effect |
摘要 |
Backside illuminated sensors and methods of manufacture are described. Specifically, a backside illuminated sensor with a dipole modulating layer near the photodiode is described. |
申请公布号 |
US9437640(B2) |
申请公布日期 |
2016.09.06 |
申请号 |
US201414481038 |
申请日期 |
2014.09.09 |
申请人 |
Applied Materials, Inc. |
发明人 |
Mings Sherry;Liu Patricia M.;Hung Steven C. H. |
分类号 |
H01L27/14;H01L27/146 |
主分类号 |
H01L27/14 |
代理机构 |
Servilla Whitney LLC |
代理人 |
Servilla Whitney LLC |
主权项 |
1. A method of forming a device, the method comprising:
forming a photodiode on a surface adjacent to and in electrical communication with a gate electrode, the photodiode formed in an insulating layer on the surface; forming an oxide layer having a thickness on the insulating layer; and depositing an insulator having a thickness on the oxide layer, the insulator comprising a dipole modulating layer having a thickness greater than about 10 Å and a fixed charge layer. |
地址 |
Santa Clara CA US |