发明名称 Engineering induced tunable electrostatic effect
摘要 Backside illuminated sensors and methods of manufacture are described. Specifically, a backside illuminated sensor with a dipole modulating layer near the photodiode is described.
申请公布号 US9437640(B2) 申请公布日期 2016.09.06
申请号 US201414481038 申请日期 2014.09.09
申请人 Applied Materials, Inc. 发明人 Mings Sherry;Liu Patricia M.;Hung Steven C. H.
分类号 H01L27/14;H01L27/146 主分类号 H01L27/14
代理机构 Servilla Whitney LLC 代理人 Servilla Whitney LLC
主权项 1. A method of forming a device, the method comprising: forming a photodiode on a surface adjacent to and in electrical communication with a gate electrode, the photodiode formed in an insulating layer on the surface; forming an oxide layer having a thickness on the insulating layer; and depositing an insulator having a thickness on the oxide layer, the insulator comprising a dipole modulating layer having a thickness greater than about 10 Å and a fixed charge layer.
地址 Santa Clara CA US