发明名称 |
Static random access memory (SRAM) device with FinFET transistors |
摘要 |
The present disclosure provides a static memory cell and fabrication method. A first fin part is formed on a semiconductor substrate. An isolation layer is formed to cover a lower portion of sidewalls of the first fin part. A first dummy gate structure is formed across the first fin part. A dielectric layer is formed on the isolation layer. A mask layer is formed on the dielectric layer with a first opening to expose the top surface of the first dummy gate structure. The first dummy gate structure is removed through the first opening to form a first trench exposing the first fin part. A portion of the isolation layer is removed through the first opening to form a second trench exposing a portion of sidewalls of the first fin part below the top surface of the isolation layer. A first gate structure is formed by filling up the first and the second trenches. |
申请公布号 |
US9437597(B2) |
申请公布日期 |
2016.09.06 |
申请号 |
US201615013902 |
申请日期 |
2016.02.02 |
申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION |
发明人 |
Fumitake Mieno |
分类号 |
H01L27/11;H01L27/092 |
主分类号 |
H01L27/11 |
代理机构 |
Anova Law Group, PLLC |
代理人 |
Anova Law Group, PLLC |
主权项 |
1. A static memory cell, comprising:
a semiconductor substrate having a first region and a second region; a first fin structure extending from the semiconductor substrate in the first region; a second fin structure extending from the semiconductor substrate in the second region; an isolation layer on the semiconductor substrate exposed by the first fin structure and the second fin structure; a first gate structure disposed across a length of the first fin structure, wherein the first gate structure covers a height of the first fin structure above a top surface of the isolation layer and covers a depth of the first fin structure below the top surface of the isolation layer; and a second gate structure disposed across a length of the second fin structure, wherein the second gate structure covers a height of the first fin structure above a top surface of the isolation layer and does not cover a depth of the second fin structure below the top surface of the isolation layer. |
地址 |
Shanghai CN |