发明名称 Stacked IC control through the use of homogenous region
摘要 A package includes a semiconductor chip. The semiconductor chip includes a substrate, a plurality of dielectric layers underlying the substrate, a dielectric region penetrating through the plurality of dielectric layers, and a metal pad overlapped by the dielectric region. A conductive plug penetrates through the substrate, the dielectric region, and the metal pad.
申请公布号 US9437578(B2) 申请公布日期 2016.09.06
申请号 US201414316125 申请日期 2014.06.26
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Hsu Wen-I;Ho Cheng-Ying;Lin Jeng-Shyan;Hung Feng-Chi;Yaung Dun-Nian
分类号 H01L25/065;H01L23/48;H01L21/306;H01L27/146;H01L25/00;H01L21/768;H01L23/00 主分类号 H01L25/065
代理机构 Slater Matsil, LLP 代理人 Slater Matsil, LLP
主权项 1. A package comprising: a first semiconductor chip including: a first substrate;a first plurality of dielectric layers underlying the first substrate;a dielectric region penetrating through the first plurality of dielectric layers; anda first metal pad overlapped by the dielectric region; and a conductive plug penetrating through the first substrate, the dielectric region, and the first metal pad, wherein an entirety of the dielectric region is underlying the first substrate.
地址 Hsin-Chu TW