发明名称 |
Stacked IC control through the use of homogenous region |
摘要 |
A package includes a semiconductor chip. The semiconductor chip includes a substrate, a plurality of dielectric layers underlying the substrate, a dielectric region penetrating through the plurality of dielectric layers, and a metal pad overlapped by the dielectric region. A conductive plug penetrates through the substrate, the dielectric region, and the metal pad. |
申请公布号 |
US9437578(B2) |
申请公布日期 |
2016.09.06 |
申请号 |
US201414316125 |
申请日期 |
2014.06.26 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Hsu Wen-I;Ho Cheng-Ying;Lin Jeng-Shyan;Hung Feng-Chi;Yaung Dun-Nian |
分类号 |
H01L25/065;H01L23/48;H01L21/306;H01L27/146;H01L25/00;H01L21/768;H01L23/00 |
主分类号 |
H01L25/065 |
代理机构 |
Slater Matsil, LLP |
代理人 |
Slater Matsil, LLP |
主权项 |
1. A package comprising:
a first semiconductor chip including:
a first substrate;a first plurality of dielectric layers underlying the first substrate;a dielectric region penetrating through the first plurality of dielectric layers; anda first metal pad overlapped by the dielectric region; and a conductive plug penetrating through the first substrate, the dielectric region, and the first metal pad, wherein an entirety of the dielectric region is underlying the first substrate. |
地址 |
Hsin-Chu TW |