| 摘要 |
PROBLEM TO BE SOLVED: To improve performance and reliability of a semiconductor device.SOLUTION: A semiconductor device has a control gate electrode CG and a memory gate electrode MG formed on a principal surface of a semiconductor substrate SB, in a memory cell region 1A, and has a first electrode D1 and a second electrode D2 formed on the principal surface of the semiconductor substrate SB, in a shunt region SH. The first electrode D1 is formed integrally with the control gate electrode CG. The second electrode D2 is formed integrally with the memory gate electrode MG. The second electrode D2 has a first portion formed along a side wall of the first electrode D1, and a second portion extending along the principal surface of the semiconductor substrate SB. In addition, to the principal surface of the semiconductor substrate SB, a height of an upper surface of the first electrode D1 is substantially equal to that of an upper surface of the first portion of the second electrode D2.SELECTED DRAWING: Figure 23 |
