Semiconductor process for forming gates with different pitches and different dimensions

摘要

A semiconductor process for forming gates with different pitches includes the following steps. A gate layer is formed on a substrate. A first mandrel and a second mandrel are respectively formed on the gate layer. A first spacer material is formed to conformally cover the first mandrel but exposing the second mandrel. A second spacer material is formed to conformally cover the first spacer material and the second mandrel. The first spacer material and the second spacer material are etched to form a first spacer beside the first mandrel and a second spacer beside the second mandrel simultaneously. The first mandrel and the second mandrel are removed. Layouts of the first spacer and the second spacer are transferred to the gate layer, thereby a first gate and a second gate being formed. Moreover, a semiconductor process, which forms the first spacer and the second spacer separately, is also provided.

主权项

1. A semiconductor process for forming gates with different pitches and different dimensions, comprising:
forming a gate layer on a substrate having a first area and a second area; forming a first mandrel on the gate layer of the first area and a second mandrel on the gate layer of the second area; forming a first spacer material in the first area to conformally cover the first mandrel but exposing the second area, wherein the step of forming the first spacer material in the first area to conformally cover the first mandrel but exposing the second area comprises: covering a patterned hard mask in the second area while exposing the first area; and covering the first spacer material in the first area; forming a second spacer material in the first area and the second area to conformally cover the first spacer material and the second mandrel; etching the first spacer material and the second spacer material to form a first spacer beside the first mandrel and a second spacer beside the second mandrel simultaneously; removing the first mandrel and the second mandrel; and transferring layouts of the first spacer and the second spacer to the gate layer, thereby a first gate and a second gate being formed.