Semiconductor device and fabrication method thereof

摘要

The present disclosure provides a method for forming a semiconductor device. The method includes providing a substrate and forming a dielectric layer on the substrate by a deposition process using reactant gases. The reactant gases include a silicon-source gas and an oxygen-source gas under a radio-frequency (RF) power. The deposition process performed for a total deposition time to form the dielectric layer is divided into a first time length, a second time length and a third time length. The RF power of the deposition process in the first time length is a first power, the first power gradually increases from the first power to a second power in the second time length, the RF power in the third time length is the second power, and the first power is less than the second power.

主权项

1. A method for forming a semiconductor device, comprising:
providing a substrate; and forming a dielectric layer on the substrate by a deposition process using reactant gases including a silicon-source gas and an oxygen-source gas under a radio-frequency (RF) power, wherein: the deposition process performed for a total deposition time to form the dielectric layer is divided into a first time length, a second time length and a third time length; and the RF power of the deposition process in the first time length is a first power, the first power gradually increases from the first power to a second power in the second time length, the RF power in the third time length is the second power, and the first power is less than the second power.