Triangular deposition chamber for a vapor deposition system.

摘要

A process and apparatus for the manufacture of chemical vapor deposited materials such as silicon carbide which comprises conveying the reaction gases to a triangular chemical vapor deposition cell (12) where material is deposited by chemical vapor deposition. The triangular cell provides a large surface area for deposition while occupying a minimum amount of the furnace floor surface area. The triangular cell has the added benefit in that deposited structure (50) is of negligible thickness at the edges (48) thereby permitting easy separation of material with a minimum of post deposition machining. <IMAGE>