发明名称 |
Process for producing a pressure transducer using silicon-on-insulator technology |
摘要 |
A process for producing a pressure transducer or sensor using the silicon-on-insulator method is provided. The process includes the following steps: (a) producing a monocrystalline silicon film (44) on a silicon substrate (6) at least locally separated from the latter by an insulating layer (42), (b) producing an opening (24) in the silicon film down to the insulating layer, (c) partially eliminating the insulating layer via the opening in order to form the diaphragm in the silicon film, and (d) resealing the opening (26). |
申请公布号 |
US5510276(A) |
申请公布日期 |
1996.04.23 |
申请号 |
US19930167503 |
申请日期 |
1993.12.15 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
DIEM, BERNARD;DELAYE, MARIE-THERESE |
分类号 |
G01L9/04;B81B3/00;G01L9/00;G01L9/12;H01L29/84;(IPC1-7):H01L21/265;H01L21/74;H01L21/764 |
主分类号 |
G01L9/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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