ELECTRON EMISSION SUBSTRATE MANUFACTURING METHOD USING SIDE-WALL

摘要

forming first insulation layer(202), a conductor(203) and second insulation layer(204) on a substrate(201); forming trench by removing some position of the insulation layers(202)(204) and the conductor(203); depositing third insulation layer(206) on the side wall and top of the trench; forming insulation layer on the side-wall by engraving the insulation layer; depositing electron emission material(208); and forming cathode by removing the second insulation layer(204) and side-wall(207) positioned between a gate(211) and a side-wall(209).