| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a composition for forming a ferroelectric film which can form a ferroelectric film by an MOD method and by a low temperature firing, and to provide its manufacturing method and a manufacturing method of a ferroelectric film using it. <P>SOLUTION: The composition for forming a ferroelectric film is one that is used for forming a ferroelectric film by the MOD method and contains an organometallic compound containing lead (Pb) and zirconium (Zr) and a methyl group and a carboxylate group, and a compound of a metal other than lead and zirconium. <P>COPYRIGHT: (C)2008,JPO&INPIT |
