发明名称 |
MOS-based active pixel sensor cell that utilizes the parasitic bipolar action of the cell to output image data |
摘要 |
A MOS-based active pixel sensor cell utilizes the parasitic bipolar action of the cell to produce a horizontal current in lieu of the vertical image current associated with conventional bipolar-based active pixel sensor cells. Image data is collected during an integration period by applying a negative voltage to the gate of the MOS transistor which is sufficient to reverse-bias both the source/body and drain/body junctions. Following this, the image data is read out by raising the gate voltage such that the source/body junction remains reverse-biased, and the drain/body junction becomes forward-biased. Under these bias conditions, an amplified horizontal image current flows from the source, through the body, and out of the drain.
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申请公布号 |
US5847422(A) |
申请公布日期 |
1998.12.08 |
申请号 |
US19970858509 |
申请日期 |
1997.05.19 |
申请人 |
FOVEONICS, INC. |
发明人 |
CHI, MIN-HWA;CHING, LIH-YING;BERGEMONT, ALBERT |
分类号 |
H01L31/113;(IPC1-7):H01L31/062;H01L27/01;H01L27/12 |
主分类号 |
H01L31/113 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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