发明名称 MEMS RF switch integrated process
摘要 A capacitance coupled, transmission line-fed, radio frequency MEMS switch and its fabrication process using photoresist and other low temperature processing steps are described. The achieved switch is disposed in a low cost dielectric housing free of undesired electrical effects on the switch and on the transmission line(s) coupling the switch to an electrical circuit. The dielectric housing is provided with an array of sealable apertures useful for wet, but hydrofluoric acid-free, removal of switch fabrication employed materials and also useful during processing for controlling the operating atmosphere surrounding the switch-e.g. at a pressure above the high vacuum level for enhanced switch damping during operation. Alternative arrangements for sealing an array of dielectric housing apertures are included. Processing details including plan and profile drawing views, specific equipment and materials identifications, temperatures and times are also disclosed.
申请公布号 US7381583(B1) 申请公布日期 2008.06.03
申请号 US20040901315 申请日期 2004.07.27
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE 发明人 EBEL JOHN L.;CORTEZ REBECCA;STRAWSER RICHARD E.;LEEDY KEVIN D.
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
主权项
地址