发明名称 |
PLANARIZATION OF METAL CONTAINER STRUCTURES |
摘要 |
A conductive material is provided in an opening formed in an insulative material. The process involves first forming a conductive material over at least a portion of the opening and over at least a portion of the insulative material which is outside of the opening. Next, a metal-containing fill material is formed over at least a portion of the conductive material which is inside the opening and which is also over the insulative material outside of the opening. The metal-containing at least partially fills the opening. At least a portion of both the metal-containing material and the conductive material outside of the openinng is then removed. Thereafter, at least a portion of the metal-containing fill material which is inside the opening is then removed. |
申请公布号 |
WO0219398(A3) |
申请公布日期 |
2002.08.15 |
申请号 |
WO2001US27138 |
申请日期 |
2001.08.31 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
YANG, SAM;DRYNAN, JOHN, M. |
分类号 |
H01L21/28;H01L21/02;H01L21/321;H01L21/768;H01L21/822;H01L21/8242;H01L27/04;H01L27/108 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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