发明名称 PLANARIZATION OF METAL CONTAINER STRUCTURES
摘要 A conductive material is provided in an opening formed in an insulative material. The process involves first forming a conductive material over at least a portion of the opening and over at least a portion of the insulative material which is outside of the opening. Next, a metal-containing fill material is formed over at least a portion of the conductive material which is inside the opening and which is also over the insulative material outside of the opening. The metal-containing at least partially fills the opening. At least a portion of both the metal-containing material and the conductive material outside of the openinng is then removed. Thereafter, at least a portion of the metal-containing fill material which is inside the opening is then removed.
申请公布号 WO0219398(A3) 申请公布日期 2002.08.15
申请号 WO2001US27138 申请日期 2001.08.31
申请人 MICRON TECHNOLOGY, INC. 发明人 YANG, SAM;DRYNAN, JOHN, M.
分类号 H01L21/28;H01L21/02;H01L21/321;H01L21/768;H01L21/822;H01L21/8242;H01L27/04;H01L27/108 主分类号 H01L21/28
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