发明名称 PLASMA TREATMENT APPARATUS, ELECTRODE PLATE FOR PLASMA TREATMENT APPARATUS AND ELECTRODE PLATE MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To efficiently uniformalize plasma density in a plasma treatment apparatus. <P>SOLUTION: A projecting part 70 is protruded toward an upper electrode side, namely, toward a plasma side on the principal surface of a susceptor 12 electrically coupled with plasma with lower impedance than the bottom face 12a of the principal surface. Therefore, high-frequency power which is carried by a high frequency current flowing on a top face layer of the principal surface of the susceptor 12 is mainly discharged from the top face of the projecting part 70 to the plasma. In order to increase a ratio Z<SB>12a</SB>/Z<SB>70</SB>between the impedance Z<SB>70</SB>of the projecting part 70 and the impedance Z<SB>12a</SB>of the bottom face 12a on the principal surface of the susceptor 12, a dielectric 72 is provided around the projecting part 70 (on the bottom face 12a). <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004363552(A) 申请公布日期 2004.12.24
申请号 JP20040025007 申请日期 2004.02.02
申请人 OKUTEKKU:KK;TOKYO ELECTRON LTD 发明人 OKUMURA KATSUYA;HIMORI SHINJI;NAGASEKI KAZUYA;MATSUMARU HIROKI;MATSUYAMA SHOICHIRO;TAKAHASHI TOSHIKI
分类号 H05H1/46;B01J19/08;C23C14/00;C23F4/00;C25D17/10;H01J37/32;H01L21/205;H01L21/3065 主分类号 H05H1/46
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