发明名称 POSITIVE RESIST COMPOSITION
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist composition suitable for use under an exposure light source of &le;200 nm, particularly F<SB>2</SB>excimer laser light (157 nm), and to specifically provide a positive resist composition which exhibits satisfactory transmittance when a light source of 157 nm is used and is excellent in various properties such as affinity for a developer and image forming property. <P>SOLUTION: The positive resist composition contains (A) a resin having a fluorine-containing specified repeating unit and having solubility in an alkali developer increased by the action of an acid and (B) a compound which generates an acid upon irradiation with an actinic ray or radiation. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004361473(A) 申请公布日期 2004.12.24
申请号 JP20030156566 申请日期 2003.06.02
申请人 FUJI PHOTO FILM CO LTD 发明人 KANDA HIROMI;MIZUTANI KAZUYOSHI
分类号 G03F7/039;C08F216/14;C08F220/24;C08F232/00;G03F7/033;H01L21/027 主分类号 G03F7/039
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