发明名称 Thin film transistors for imaging system and method of making the same
摘要 A detector comprising an electrode formed from a first layer of conductive material, a readout line formed from a second layer of conductive material, and a via electrically connecting the readout line and the electrode. In one embodiment, the detector includes a source electrode and a drain electrode formed from the first layer of conductive material, and a data line formed from the second layer of conductive material, such that the source and drain electrodes are vertically offset from the data line. Alternatively, in another embodiment, the detector includes a gate electrode formed from the first layer of conductive material, and a scan line formed from the second layer of conductive material, such that the gate electrode is vertically offset from the scan line.
申请公布号 US2006219929(A1) 申请公布日期 2006.10.05
申请号 US20050096177 申请日期 2005.03.31
申请人 ALBAGLI DOUGLAS;HENNESSY WILLIAM A 发明人 ALBAGLI DOUGLAS;HENNESSY WILLIAM A.
分类号 G01T1/24 主分类号 G01T1/24
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