| 摘要 |
A voltage supply circuit and a semiconductor memory are provided to control driving capability of the voltage supply circuit for a precharge voltage according to an operation state of the semiconductor memory after assuring stable response rate and oscillation against the variation of an output voltage. A first differential amplifier(AMP1) receives a first voltage and a voltage of an output node as an input voltage, and enables an output signal when the voltage of the output node is lower than the first voltage. A second differential amplifier(AMP2) receives a second voltage higher than the first voltage and the voltage of the output node as an input voltage, and enables an output signal when the voltage of the output node is higher than the second voltage. A first driving circuit(T1,T2) connects the output node to a high voltage line in response to the enabling of the output signal of the first differential amplifier, and connects the output node to a low voltage line in response to the enabling of the output signal of the second differential amplifier. A second driving circuit(T4,T6) connects the output node to the high voltage line in response to the enabling of the output signal of the first differential amplifier, and connects the output node to the low voltage line in response to the enabling of the output signal of the second differential amplifier, during an enabling period of a driving capability control signal. The first and second differential amplifiers comprise a differential amplifier part enabling an output signal according to the amplitude relation of input voltages, and a current control part increasing a bias current in response to the enabling of the driving capability control signal by being connected to the differential amplifier part.
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