| 摘要 |
The semiconductor substrate comprises a first monitor part 14 a formed in a first region near a center of a semiconductor wafer 10 , which includes a first element having a first electrode 24 formed over the semiconductor wafer 10 with a first insulation film 22 formed therebetween, and a first electrode pad 32 electrically connected to the first electrode 24 ; and a second monitor part 14 b formed in a second region different from the first region, which includes a second element having a second electrode 24 formed on the semiconductor wafer 10 with a second insulation film 22 formed therebetween, and a second electrode pad 32 electrically connected to the second electrode 24 . When electric breakdown has taken place in both the first monitor part 14 a and the second monitor part 14 b, it can be judged that too large static electricity was generated upon the release of the surface protection film 39 . When electric breakdown has taken place in either of the first monitor part 14 a and the second monitor part 14 b, the electric breakdown has taken place due to factors other than the static electricity generated upon the release of the surface protection film. When electric breakdown has taken place in neither of the first monitor part 14 a and the second monitor part 14 b, it can be judged that too large static electricity was generated upon the release of the surface protection film 39 . Thus, factors for defects of semiconductor devices can be identified, which leads to improved quality of the semiconductor devices. |
