| 摘要 |
PURPOSE: A silicon epitaxial wafer and a manufacturing method thereof are provided to reduce the amount of bending even though the silicon epitaxial wafer has a diameter above 300 mm, by controlling the amount of doping of germanium with larger lattice constant than silicon. CONSTITUTION: A silicon wafer(1) with a diameter above 300 mm is fabricated by being grown with Czochralski method and slicing an ingot doped with boron and germanium. The boron concentration is doped over 18 multiplication (atoms/cm^3) of 8.5 multiply 10. The silicon epitaxial film(2) is grown on the surface of the silicon wafer doped with the germanium. The film thickness of the silicon epitaxial film is above 4micrometers and below 20micrometers.
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