| 摘要 |
PROBLEM TO BE SOLVED: To improve performance of a semiconductor device.SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming a gate electrode GEt of a transfer transistor on a p-type well PW1; subsequently, forming a photo diode PD in the p-type well PW1 at a portion located on one side of the gate electrode GEt; and forming a silicon and nitrogen containing cap insulation film CAP on the photo diode PD on the p-type well PW1 before implanting an impurity ion into a portion located on the side of the gate electrode GEt opposite to the one side, for forming an n-type low-concentration semiconductor region of the transfer transistor.SELECTED DRAWING: Figure 10 |
