DATA STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF

摘要

According to an embodiment of the present invention, an operating method of a data storage device comprises the steps of: reading selection transistors included in each of memory blocks with a reference voltage; determining whether there is a memory block in which the number of selection transistors having a threshold voltage less than the reference voltage is greater than or equal to a reference value; and programming the selection transistors of the memory block in which the number of the selection transistors having the threshold voltage less than the reference voltage is greater than or equal to the reference value, at a time when a reference time elapses after an erase operation is performed. According to an embodiment of the present invention, the performance of the data storage device can be improved by efficiently programming the selection transistors.