发明名称 |
METHOD FOR PREPARING ZNO NANO-CRYSTAL DIRECTLY ON THE SILICON SUBSTRATE |
摘要 |
<p>A method for forming a ZnO nano-crystal directly on a silicon substrate is provided to omit additional processes when forming a silicon substrate based photoelectric cell by forming the amorphous ZnO-nano crystal within a Zn-Si-O complex thin film directly. In a method for forming a ZnO nano-crystal directly on a silicon substrate, a Zn-Si-O complex thin film is formed on a semiconductor substrate, and the Zn-Si-O complex thin film is annealed. Wherein, the ZnO nano crystal is formed within an amorphous Zn-Si-O complex thin film on a silicon substrate, and the Zn-Si-O complex thin film is formed by using a sputtering method.</p> |
申请公布号 |
KR100835666(B1) |
申请公布日期 |
2008.06.09 |
申请号 |
KR20070000143 |
申请日期 |
2007.01.02 |
申请人 |
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
KIM, YOUNG HWAN;CHO, WOON JO;KIM, SEONG IL;KIM, CHUN KEUN;KIM, YONG TAE |
分类号 |
H01L21/203;B82B3/00 |
主分类号 |
H01L21/203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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