发明名称 METHOD FOR PREPARING ZNO NANO-CRYSTAL DIRECTLY ON THE SILICON SUBSTRATE
摘要 <p>A method for forming a ZnO nano-crystal directly on a silicon substrate is provided to omit additional processes when forming a silicon substrate based photoelectric cell by forming the amorphous ZnO-nano crystal within a Zn-Si-O complex thin film directly. In a method for forming a ZnO nano-crystal directly on a silicon substrate, a Zn-Si-O complex thin film is formed on a semiconductor substrate, and the Zn-Si-O complex thin film is annealed. Wherein, the ZnO nano crystal is formed within an amorphous Zn-Si-O complex thin film on a silicon substrate, and the Zn-Si-O complex thin film is formed by using a sputtering method.</p>
申请公布号 KR100835666(B1) 申请公布日期 2008.06.09
申请号 KR20070000143 申请日期 2007.01.02
申请人 KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 KIM, YOUNG HWAN;CHO, WOON JO;KIM, SEONG IL;KIM, CHUN KEUN;KIM, YONG TAE
分类号 H01L21/203;B82B3/00 主分类号 H01L21/203
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