发明名称 |
PHOTODETECTOR, MANUFACTURING METHOD THEREOF, RADIATION DETECTOR AND RADIATION DETECTION DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide: a photodetector in which a black resist can be used as a light-shielding material and the deterioration in reliability thereof can be suppressed even when metal is used; a manufacturing method of a radiation detector; and a radiation detection device.SOLUTION: A plurality of photodetection cells 20, each of which comprises an APD (avalanche photodiode), are provided on a surface of a silicon substrate 12. A first terminal of each of the photodetection cells 20 is connected to a TSV (Through Silicon Via) electrode 50 formed to an opening on a rear face side of the silicon substrate 12 via a wiring 40b, and a second terminal thereof is connected to a rear surface electrode 60. A light-shielding groove 30a is provided so as to penetrate through the silicon substrate 12 and surround each photo detection cell 20, and a light-shielding member 30b formed of a black resist or metal is filled in the light-shielding groove.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016162772(A) |
申请公布日期 |
2016.09.05 |
申请号 |
JP20150037183 |
申请日期 |
2015.02.26 |
申请人 |
TOSHIBA CORP |
发明人 |
YAGI HITOSHI;HASEGAWA TSUTOMU |
分类号 |
H01L27/146;G01T1/20;H01L27/14;H01L27/144;H01L31/08;H04N5/32 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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