发明名称 PHOTODETECTOR, MANUFACTURING METHOD THEREOF, RADIATION DETECTOR AND RADIATION DETECTION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide: a photodetector in which a black resist can be used as a light-shielding material and the deterioration in reliability thereof can be suppressed even when metal is used; a manufacturing method of a radiation detector; and a radiation detection device.SOLUTION: A plurality of photodetection cells 20, each of which comprises an APD (avalanche photodiode), are provided on a surface of a silicon substrate 12. A first terminal of each of the photodetection cells 20 is connected to a TSV (Through Silicon Via) electrode 50 formed to an opening on a rear face side of the silicon substrate 12 via a wiring 40b, and a second terminal thereof is connected to a rear surface electrode 60. A light-shielding groove 30a is provided so as to penetrate through the silicon substrate 12 and surround each photo detection cell 20, and a light-shielding member 30b formed of a black resist or metal is filled in the light-shielding groove.SELECTED DRAWING: Figure 1
申请公布号 JP2016162772(A) 申请公布日期 2016.09.05
申请号 JP20150037183 申请日期 2015.02.26
申请人 TOSHIBA CORP 发明人 YAGI HITOSHI;HASEGAWA TSUTOMU
分类号 H01L27/146;G01T1/20;H01L27/14;H01L27/144;H01L31/08;H04N5/32 主分类号 H01L27/146
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