Self-forming barrier for subtractive copper

摘要

A method of forming electrically conductive structures that includes forming a copper containing layer including a barrier forming element, and applying a first anneal to the copper containing layer. The first anneal increases grain size of the copper in the copper containing layer. The copper containing layer is etched to provide a plurality of copper containing lines. A dielectric fill is deposited in the space between adjacent copper containing lines. A second anneal is applied to the plurality of copper containing lines. During the second anneal the barrier forming element diffuse to an interface between sidewalls of the copper containing lines and the dielectric fill to form a barrier layer along the sidewalls of the copper containing lines.

主权项

1. A method of forming electrically conductive structures comprising:
forming at least one copper containing layer including a barrier forming element; applying a first anneal to the at least one copper containing layer, wherein the first anneal increases grain size of copper in said at least one copper containing layer; etching the at least one copper containing layer to provide a plurality of copper containing lines; depositing a dielectric fill in a space between adjacent copper containing lines; and applying a second anneal to the plurality of copper containing lines, wherein during said second anneal said barrier forming element diffuse to an interface between sidewalls of the plurality of the copper containing pillars and the dielectric fill to form a barrier layer along the sidewalls of the copper containing lines.