发明名称 Thin film forming apparatus and thin film forming method
摘要 A thin film forming apparatus includes a substrate holding portion and a target portion. The target portion has a plurality of targets arranged at predetermined intervals and parallel to a substrate held by the substrate holding portion. The substrate holding portion is configured to move the substrate parallel to the target portion. A shield portion configured to block sputtered particles flying from the target portion is placed on the target portion side of the substrate so as to face a gap between adjoining ones of the targets.
申请公布号 US9469897(B2) 申请公布日期 2016.10.18
申请号 US201113991667 申请日期 2011.11.29
申请人 SHARP KABUSHIKI KAISHA 发明人 Chikama Yoshimasa;Suzuki Iwao
分类号 C23C14/00;C23C14/35;C23C14/08;C23C14/56;H01J37/34 主分类号 C23C14/00
代理机构 Keating & Bennett, LLP 代理人 Keating & Bennett, LLP
主权项 1. A thin film forming apparatus, comprising: a substrate holding portion that holds a substrate; and a target portion facing a substrate held by the substrate holding portion, wherein the target portion includes a plurality of targets arranged at predetermined intervals and parallel to the substrate held by the substrate holding portion, the substrate holding portion moves the substrate held by the substrate holding portion parallel to the target portion, the thin film forming apparatus further includes a shield portion that blocks sputtered particles flying from the target portion, the shield portion is placed on the target portion side of the substrate held by the substrate holding portion, so as to face a gap between adjoining ones of the targets, the thin film forming apparatus further includes a partition wall portion provided between the adjoining ones of the targets, the partition wall portion blocks the sputtered particles flying from the targets, the partition wall portion includes flange portions that extend from the partition wall portion and face a portion of the gap between the adjoining ones of the targets, and the flange portions are provided above the targets such that lower surfaces of each of the flange portions are above uppermost surfaces of the targets, and the lower surfaces of each of the flange portions overlap ends of the gap between the adjoining ones of the targets.
地址 Osaka JP