发明名称 SEMICONDUCTOR LASER EXCITATION SOLID-STATE LASER
摘要 Conventional solid state laser technology can require high precision positioning or numerous parts and assembly processes. The present invention provides a semiconductor laser excitation solid-state laser comprising: a planar waveguide-type solid-state laser element disposed on a solid-state laser substrate; an LD array; and a sub-mount substrate on which joining layers of two different thicknesses are formed on the same plane; wherein the planar waveguide-type solid-state laser element is joined to the sub-mount substrate on the surface on the opposite side of a surface on which the solid-state laser substrate is mounted, via a joining layer of one of the thicknesses out of the joining layers of the two different thicknesses, and the LD array is joined to the sub-mount substrate on the surface on a light-emitting layer side, via another joining layer of the other thickness out of the joining layers of the two thicknesses.
申请公布号 CA2855913(C) 申请公布日期 2016.11.29
申请号 CA20112855913 申请日期 2011.11.16
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 TAMAYA, MOTOAKI;YOKOYAMA, AKIRA
分类号 H01S3/094;H01S3/02;H01S3/06 主分类号 H01S3/094
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