发明名称 |
SEMICONDUCTOR LASER EXCITATION SOLID-STATE LASER |
摘要 |
Conventional solid state laser technology can require high precision positioning or numerous parts and assembly processes. The present invention provides a semiconductor laser excitation solid-state laser comprising: a planar waveguide-type solid-state laser element disposed on a solid-state laser substrate; an LD array; and a sub-mount substrate on which joining layers of two different thicknesses are formed on the same plane; wherein the planar waveguide-type solid-state laser element is joined to the sub-mount substrate on the surface on the opposite side of a surface on which the solid-state laser substrate is mounted, via a joining layer of one of the thicknesses out of the joining layers of the two different thicknesses, and the LD array is joined to the sub-mount substrate on the surface on a light-emitting layer side, via another joining layer of the other thickness out of the joining layers of the two thicknesses. |
申请公布号 |
CA2855913(C) |
申请公布日期 |
2016.11.29 |
申请号 |
CA20112855913 |
申请日期 |
2011.11.16 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
TAMAYA, MOTOAKI;YOKOYAMA, AKIRA |
分类号 |
H01S3/094;H01S3/02;H01S3/06 |
主分类号 |
H01S3/094 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|