SILICON CARBIDE SINGLE-CRYSTAL SUBSTRATE, SILICON CARBIDE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide single crystal substrate capable of suppressing a positional deviation of a mask pattern in a photolithography process, a silicon carbide semiconductor device, and a method of manufacturing the silicon carbide semiconductor device.SOLUTION: A silicon carbide single-crystal substrate 10 comprises a first principal surface 10a and a second principal surface 10b on a side opposite to the first principal surface 10a. The first principal surface 10a includes a central square region 1 and an outside square region 2. When viewed from a thickness direction TD, the length of one side of both the central square region 1 and outside square region 2 is 15 mm. A maximum diameter W of the first principal surface 10a is 100 mm or greater. A TTV (Total Thickness Variation) of the silicon carbide single-crystal substrate 10 is 5 μm or less. A value obtained by dividing a LTIR (Local Total Indicated Reading) in the central square region 1 by a LTV (Local Thickness Variation) in the central square region 1 is 0.8 to 1.2. A value obtained by dividing a LTV in the outside square region 2 by the LTV in the central square region 1 is 1 to 3.SELECTED DRAWING: Figure 1